Silicon Carbide SiC

Whakaahuatanga

Silicon Carbide Wafer SiC, he tino uaua, he mea hanga hangai hangai te pūhui tioata o te silicon me te waro na te tikanga MOCVD, me te whakaatuko tona whanui whanui motuhake me etahi atu ahuatanga pai o te iti o te whakarea o te roha waiariki, teitei ake te pāmahana whakahaere, te pai o te wera o te wera, te iti o te whakawhiti me te whakahekenga o te kawe, te pai ake o te kaha, te kaha o te waiariki me te kaha o te pakaru o te papa hiko, me te kaha ake o te kaha. huru.Ka taea te whakarato Silicon Carbide SiC i Western Minmetals (SC) Corporation i te rahi o te 2″ 3'4“ me te 6″ (50mm, 75mm, 100mm, 150mm) te diameter, me te momo-n, ahua-insulating, he angiangi angiangi mo te ahumahi. me te tono taiwhanga.Ko nga whakaritenga kua whakaritea mo te otinga tino pai ki o taatau kaihoko puta noa i te ao.

Nga tono

Ko te kounga teitei 4H / 6H Silicon Carbide SiC wafer he tino pai mo te hanga i te maha o nga taputapu hihiko tere, teitei-te-mahana me te ngaohiko teitei penei i nga diodes Schottky & SBD, nga MOSFET me nga JFET, me era atu. he rauemi e hiahiatia ana mo te rangahau me te whakawhanaketanga o nga transistors bipolar me te thyristors.He mea tino pai mo te whakatipuranga hou, ko te angiangi a Silicon Carbide SiC ka mahi ano hei whakamaarama wera pai i roto i nga waahanga rama hiko-nui, hei taputapu pumau me te rongonui mo te whakatipu i te paparanga GaN hei pai mo nga rangahau rangahauiao e whai ake nei.

Uiui inaianei

Nga korero

Tohutohu

Whakatakotoranga Hangarau

Silicon Carbide SiC

Silicon Carbide SiCi Western Minmetals (SC) Corporation ka taea te whakarato i te rahi o te 2 ″ 3' 4 "me te 6" (50mm, 75mm, 100mm, 150mm) te diameter, me te momo-n, ahua-waahanga, he angiangi taiwhanga ranei mo te tono ahumahi me te taiwhanga. .Ko tetahi whakaritenga kua whakaritea mo te otinga tino pai ki o taatau kaihoko puta noa i te ao.

Tātai Raina	SiC
Taumaha rāpoi	40.1
Hanganga tioata	Wurtzite
Te ahua	Mārō
Te Whakarewa	3103±40K
Kohuatanga	N/A
Kiato i te 300K	3.21 g/cm³
Aputa Pungao	(3.00-3.23) eV
Te parenga o roto	>1E5 Ω-cm
Tau CAS	409-21-2
Tau EC	206-991-8

Kao.	Nga taonga	Whakatakotoranga Paerewa
1	Rahi SiC	2"	3"	4"	6"
2	Diamita mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Tikanga Tipu	MOCVD	MOCVD	MOCVD	MOCVD
4	Momo Kawenga	4H-N, 6H-N, 4H-SI, 6H-SI
5	Te parenga Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Takotoranga	0°±0.5°;4.0° ki te <1120>
7	Mātotoru μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Tauwāhi Papa Tuatahi	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Te roa papatahi tuatahi mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Wāhi Papatahi Tuarua	Te anga o te Silicon ki runga: 90°, te karaka mai i te papa tuatahi ±5.0°
11	Te roa papatahi tuarua mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm mōrahi	15	15	15	15
13	Kopere μm mōrahi	40	40	40	40
14	μm morahi	60	60	60	60
15	Tapa Whakakore mm te teitei	1	2	3	3
16	Micropipe kiato cm-2	<5, ahumahi;<15, taiwhanga;<50, tanga
17	Wehenga cm-2	<3000, ahumahi;<20000, taiwhanga;<500000, ware
18	Te Roopu Mata nm max	1(Kōrohia), 0.5 (CMP)
19	Kapiti	Kore, mo te reanga ahumahi
20	Papa Hexagonal	Kore, mo te reanga ahumahi
21	Nga karawarawa	≤3mm, te roa katoa iti iho i te diameter tïpako
22	Tipi Tipi	Kore, mo te reanga ahumahi
23	Tarapi	Ko te ipu angiangi kotahi kua hiri ki te peeke hiato konumohe.

Silicon Carbide SiC 4H/6HHe tino pai te angiangi o te kounga teitei mo te hanga i te maha o nga taputapu hiko tere, teitei me te ngaohiko hiko penei i te Schottky diodes & SBD, nga MOSFET me te JFET, me era atu. rangahau me te whakawhanaketanga o nga transistors bipolar me te thyristors.He mea tino pai mo te whakatipuranga hou, ko te angiangi a Silicon Carbide SiC ka mahi ano hei whakamaarama wera pai i roto i nga waahanga rama hiko-nui, hei taputapu pumau me te rongonui mo te whakatipu i te paparanga GaN hei pai mo nga rangahau rangahauiao e whai ake nei.